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FK7KM-12 High-Speed Switching Use Nch Power MOS FET REJ03G1377-0200 (Previous: MEJ02G0237-0101) Rev.2.00 Jul 07, 2006 Features * * * * * VDSS : 600 V rDS (ON) (max) : 1.63 ID : 7 A Viso : 2000 V Integrated Fast Recovery Diode (MAX.) : 150 ns Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) 2 1 1. Gate 2. Drain 3. Source 1 2 3 3 Applications Servo motor drive, Robot, UPS, Lamp ballast, etc. Maximum Ratings (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Mass Symbol VDSS VGSS ID IDM IS ISM PD Tch Tstg Viso -- Ratings 600 30 7 21 7 21 35 - 55 to +150 - 55 to +150 2000 2.0 Unit V V A A A A W C C Vrms g Conditions VGS = 0 V VDS = 0 V AC for 1 minute, Terminal to case Typical value Rev.2.00 Jul 07, 2006 page 1 of 6 FK7KM-12 Electrical Characteristics (Tch = 25C) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol V(BR) DSS V(BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) | yfs | Ciss Coss Crss td (on) tr td (off) tf VSD Rth(ch-c) trr Min. 600 30 -- -- 2 -- -- 3.3 -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3 1.25 3.75 5.5 1100 125 17 30 30 100 35 1.5 -- -- Max. -- -- 10 1 4 1.63 4.89 -- -- -- -- -- -- -- -- 2.0 3.57 150 Unit V V A mA V V S pF pF pF ns ns ns ns V C/W ns Test conditions ID = 1 mA, VGS = 0 V IG = 100 A, VDS = 0 V VGS = 25 V, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 1 mA, VDS = 10 V ID = 3 A, VGS = 10 V ID = 3 A, VGS = 10 V ID = 3 A, VDS = 10 V VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 200 V, ID = 3 A, VGS = 10 V, RGEN = RGS = 50 IS = 3 A, VGS = 0 V Channel to case IS = 7 A, dis/dt = -100 A/s Performance Curves Power Dissipation Derating Curve 50 5 3 2 Maximum Safe Operating Area Power Dissipation PD (W) tw = 10s 100s Drain Current ID (A) 40 30 101 7 5 3 2 100 7 5 3 2 20 10 0 0 50 100 150 200 10-1 7 DC 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Tc = 25C Single Pulse Case Temperature Tc (C) Drain-Source Voltage VDS (V) Rev.2.00 Jul 07, 2006 page 2 of 6 FK7KM-12 Output Characteristics (Typical) 20 PD = 35W Output Characteristics (Typical) 10 Tc = 25C Pulse Test Drain Current ID (A) Drain Current ID (A) 16 VGS = 20V 10V 6V Tc = 25C Pulse Test 8 VGS = 20V 10V 6V 5V 6 12 8 5V 4 PD = 35W 4V 4 4V 0 0 10 20 30 40 50 2 0 0 4 8 12 16 20 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Drain-Source On-State Resistance rDS(ON) () Drain-Source On-State Voltage VDS(ON) (V) On-State Voltage vs. Gate-Source Voltage (Typical) 40 On-State Resistance vs. Drain Current (Typical) 5.0 Tc = 25C Pulse Test 32 ID = 14A Tc = 25C Pulse Test 4.0 24 3.0 VGS = 10V 20V 16 7A 8 3A 2.0 1.0 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 0 0 4 8 12 16 20 Gate-Source Voltage VGS (V) Drain Current ID (A) Forward Transfer Admittance vs. Drain Current (Typical) Forward Transfer Admittance | yfs | (S) 101 7 VDS = 10V Pulse Test 5 3 2 100 7 5 3 2 10-1 -1 10 23 5 7 100 23 5 7 101 Transfer Characteristics (Typical) 20 Drain Current ID (A) 16 Tc = 25C VDS = 50V Pulse Test Tc = 25C 75C 125C 12 8 4 0 0 4 8 12 16 20 Gate-Source Voltage VGS (V) Drain Current ID (A) Rev.2.00 Jul 07, 2006 page 3 of 6 FK7KM-12 Capacitance vs. Drain-Source Voltage (Typical) 2 103 7 5 3 2 102 7 5 3 2 Coss Ciss 103 7 5 Switching Characteristics (Typical) Tch = 25C VDD = 200V VGS = 10V RGEN = RGS = 50 td(off) 102 7 5 3 2 101 10-1 23 5 7 100 23 Capacitance C (pF) Switching Time (ns) 3 2 tf tr td(on) 5 7 101 Crss Tch = 25C 101 f = 1MHz 7V GS = 0V 5 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 Drain-Source Voltage VDS (V) Drain Current ID (A) Gate-Source Voltage vs. Gate Charge (Typical) 20 40 Source-Drain Diode Forward Characteristics (Typical) VGS = 0V Pulse Test Gate-Source Voltage VGS (V) Tch = 25C ID = 7 A 16 VDS = 100V 200V 12 400V 8 Source Current IS (A) 32 24 Tc = 125C 16 75C 8 4 25C 0 0 20 40 60 80 100 0 0 0.8 1.6 2.4 3.2 4.0 Gate Charge Qg (nC) On-State Resistance vs. Channel Temperature (Typical) 101 7 VGS = 10V 5 ID = 3A Pulse Test 3 2 100 7 5 3 2 10-1 0 50 100 150 200 250 Source-Drain Voltage VSD (V) Threshold Voltage vs. Channel Temperature (Typical) 5.0 Drain-Source On-State Resistance rDS(ON) (25C) Drain-Source On-State Resistance rDS(ON) (tC) Gate-Source Threshold Voltage VGS(th) (V) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 -50 0 50 100 150 Channel Temperature Tch (C) Channel Temperature Tch (C) Rev.2.00 Jul 07, 2006 page 4 of 6 FK7KM-12 Breakdown Voltage vs. Channel Temperature (Typical) 1.4 Drain-Source Breakdown Voltage V(BR)DSS (tC) Drain-Source Breakdown Voltage V(BR)DSS (25C) Diode Reverse vs. Source Currnet Characteristic (Typical) 1.2 Reverce Recovery Time trr (ns) VGS = 0V ID = 1mA 1.0 3 2 102 trr 7 5 3 2 101 0 10 Irr 3 2 101 7 5 3 2 0.8 0.6 0.4 -50 0 50 100 150 23 5 7 101 Tch = 25C Tch = 150C 100 23 5 7 102 Channel Temperature Tch (C) Source Current IS (A) Transient Thermal Impedance Zth(ch-c) (C/W) Diode Reverse vs. Source Currnet dis/dt Characteristic (Typical) Transient Thermal Impedance Characteristics 101 7 5 D=1 3 2 0.5 100 7 5 3 2 10-1 7 5 3 2 0.2 0.1 3 2 trr 102 7 5 3 2 101 7 5 101 101 7 5 3 2 100 Tch = 25C 7 Tch = 150C 5 3 23 5 7 10 Reverce Recovery Current Irr (ns) 5 Reverce Recovery Time trr (ns) 5 IS = 7A VGS = 0V 3 VDD = 250V 2 PDM 0.05 0.02 0.01 Single Pulse tw T D= tw T Irr 23 5 7 102 10-2 10-42 3 5710-32 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 Source Current dis/dt (-A/s) Pulse Width tw (s) Switching Time Measurement Circuit Vin Monitor D.U.T. RL Vout Monitor Switching Waveform 90% RGEN Vin Vout 10% 10% 10% RGS VDD 90% td(on) tr 90% td(off) tf Rev.2.00 Jul 07, 2006 page 5 of 6 Reverce Recovery Current Irr (ns) 103 7 5 102 dis/dt = -100A/s 7 VGS = 0V 5 VDD = 250V FK7KM-12 Package Dimensions Package Name TO-220FN JEITA Package Code RENESAS Code PRSS0003AB-A Previous Code MASS[Typ.] 2.0g Unit: mm 10 0.3 2.8 0.2 15 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 0.75 0.15 2.54 0.25 2.54 0.25 Ordering Information Lead form Standard packing Quantity Standard order code Standard order code example FK7KM-12 Straight type Plastic Magazine (Tube) 1050 Type name Note: Please confirm the specification about the shipping in detail. Rev.2.00 Jul 07, 2006 page 6 of 6 2.6 0.2 4.5 0.2 6.5 0.3 3 0.3 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 (c) 2006. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .6.0 |
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